功能:精准找出晶圆上下层集成电路对位偏移量
应用范围:半导体、光电、光通讯等
技术参数/General specifications:
技术(Technology):红外CCD(IR CCD)
视场(FOV):0.8mm*0.5 mm和1.25μm分辨率
(0.8mm x 0.6mm with 1.25 um resolution)
衬底(Substrate):硅,砷化镓(Si, GaAs)
测量参数(Measure parameter):重叠和CD自动分析(Overlap & CD (Auto analysis))
光源(Light source):明场&透射光场照明
(Bright field & transmitted bright field illumination)
关键词(Keyword):3D、IC、重叠(overlap)