氮化铝厚膜晶片苏州纳维_其它_其它材料_半导体原材料_耗材馆

氮化铝厚膜晶片苏州纳维

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氮化铝厚膜晶片

性能参数 (Specifications):

*产品型号 (Item)*	AlN-T-C-C50
*尺寸 (Dimensions)*	Ф 50.8 mm ± 0.1 mm
衬底 (Substrate)	Sapphire (Single Side Polished)
*厚度 (Thickness)*	4 ~ 5 µm
*晶体取向 (Orientation)*	C-plane (0001) ± 1°
*导电类型* (Conduction Type)	Semi-Insulating
*晶体质量* *(Crystalline quality)*	XRD FWHM of (0002) < 350 arcsec. XRD FWHM of (10-12) < 450 arcsec
*边缘排除区* *(Edge Exclusion zone)*	< 2 mm
*表面粗糙度* (Surface Roughness)	Ra < 5 nm (10 µm x 10 µm)
*包装 (Package)*	Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

* Other thickness, size can be customized

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