Symbol

Parameter

Value

Units

VCES

 Collector-Emitter Voltage

600

V

VGES

 Gate-Emitter Voltage

+30

V

IC

 Continuous Collector Current( TC=25℃)

40

A

 Continuous Collector Current ( TC=100℃)

20

A

ICM

 Pulsed Collector Current (Note 1)

80

A

IF

 Diode Continuous Forward Current( TC=100℃)

20

A

IFM

 Diode Maximum Forward Current (Note 1)

80

A

tsc

 Short Circuit Withstand Time

10

us

PD

 Maximum Power Dissipation( TC=25℃)

190

W

 Maximum Power Dissipation( TC=100℃)

80

W

TJ

 Operating Junction Temperature Range

-55 to +150

℃

TSTG

 Storage Temperature Range

-55 to +150

℃

Symbol

Parameter

Max.

Units

Rth j-c

 Thermal Resistance, Junction to case for IGBT

0.65

℃/W

Rth j-c

 Thermal Resistance, Junction to case for Diode

1.5

℃/W

Rth j-a

 Thermal Resistance, Junction to Ambient

40

℃/W

  Symbol

                         Parameter

   TestConditions

Min.

Typ.

Max.

Units

BVCES

Collector-EmitterBreakdown Voltage

VGE=0V,IC=250uA

600

-

-

V

ICES

Collector-EmitterLeakage Current

VCE=600V,VGE=0V

-

-

100

uA

IGES

Gate Leakage Current, Forward

VGE=30V,VCE=0V

-

-

100

nA

Gate Leakage Current, Reverse

VGE=-30V,VCE=0V

-

-

-100

nA

VGE(th)

GateThreshold Voltage

VGE=VCE,IC=250uA

3.5

-

5.5

V

VCE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,IC=20A

-

1.95

2.4

V

Qg

Total Gate Charge

VCC=480V

VGE=15V

IC=20A

-

85

nC

Qge

Gate-EmitterCharge

-

34

nC

Qgc

Gate-CollectorCharge

-

25

nC

td(on)

Turn-on Delay Time

VCC=300V

VGE=15V

IC=20A

RG=28W

Inductive Load

TC=25℃

-

42

-

ns

tr

Turn-on Rise Time

-

48

-

ns

td(off)

Turn-off Delay Time

-

95

-

ns

tf

Turn-off Fall Time

-

230

-

ns

Eon

Turn-on Switching Loss

-

0.44

-

mJ

Eoff

Turn-off Switching Loss

-

0.40

-

mJ

Ets

Total Switching Loss

-

0.84

-

mJ

Cies

 InputCapacitance

VCE=25V

VGE=0V

f = 100kHz

-

1150

-

pF

Coes

OutputCapacitance

-

130

-

pF

Cres

ReverseTransfer Capacitance

-

    42

-

pF

Symbol

                 Parameter

TestConditions

Min.

Typ.

Max.

Units

VF

DiodeForward Voltage

IF=20A

-

1.5

  2.0

V

tr r

Diode Reverse Recovery Time

VCE= 300V

IF=20A

dIF/dt = 200A/us

-

65

ns

Ir r

Diode peak Reverse Recovery Current

-

6

A

Qr r

Diode Reverse Recovery Charge

-

200

    nC