氮化铝厚膜晶片
性能参数 (Specifications):
产品型号 (Item)
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AlN-T-C-C50
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尺寸 (Dimensions)
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Ф 50.8 mm ± 0.1 mm
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衬底 (Substrate)
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Sapphire (Single Side Polished)
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厚度 (Thickness)
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4 ~ 5 µm
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晶体取向 (Orientation)
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C-plane (0001) ± 1°
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导电类型
(Conduction Type)
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Semi-Insulating
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晶体质量
(Crystalline quality)
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XRD FWHM of (0002) < 350 arcsec.
XRD FWHM of (10-12) < 450 arcsec
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边缘排除区
(Edge Exclusion zone)
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< 2 mm
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表面粗糙度
(Surface Roughness)
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Ra < 5 nm (10 µm x 10 µm)
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包装 (Package)
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Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
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* Other thickness, size can be customized
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