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MORSENSEMI 3英寸GaAs单晶片主要参数指标
|
产品型号Item |
GaN-T-N |
GaN-T-S |
GaN-T-P |
|
尺寸Dimensions |
Ф 2” |
||
|
厚度Thickness |
4 µm, 10~40 µm |
30 µm, 90 µm |
5 µm |
|
晶体取向Orientation |
C-axis(0001) ± 1° |
||
|
导电类型Conduction Type |
N-type |
Semi-Insulating |
P-type |
|
电阻率Resistivity(300K) |
< 0.05 Ω·cm |
﹥106 Ω·cm |
< 0.05 Ω·cm |
|
位错密度Dislocation Density |
Less than 1x108 cm-2 |
||
|
衬底结构Substrate structure |
Thick GaN on Sapphire(0001) |
||
|
有效面积Useable Surface Area |
> 90% |
||
|
抛光Polishing |
Standard: SSP Option: DSP |
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|
包装Package |
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere. |
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